MJE3055T Transistor Features
- Silicon NPN Transistor
- Collector-Emitter Volt (Vceo): 60V
- Collector-Base Volt (Vcbo): 70V
- Collector Current (Ic): 10A
- hfe: 20-100 @ 4000mA
- Power Dissipation (Ptot): 75W
- Current-Gain-Bandwidth (ftotal): 2MHz
- Type: NPN
Description
The MJE3055T Transistor is a popular
NPN medium power transistor used in a wide range of applications.
The MJE3055T NPN Transistor is housed in a standard through-hole TO-220
package. A lightweight aluminium heatsink can be fitted
to the transistor if required. The transistor has a power
rating of 75W, with a maximum collector current of 10A.
The MJE3055T NPN Transistor is ideal for medium power audio amplifiers
and is often used together with the complementary pair MJE2955T PNP Transistor.
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Part Summary
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Manufacturer
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Various
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Manufacturer's Part Number
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MJE3055T
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Manufacturer's Web Site
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Futurlec Part Number
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MJE3055T
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Department
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Transistors
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Category
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Power - MJE Series
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RoHS Compliant
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Package Type
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TO-220
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Technical Data
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MJE3055T Datasheet
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Integrated Circuits
