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2SB1109 PNP Power Transistor
2SB1109 Transistor Features
- 2SB1109 Silicon PNP Transistor
- Collector-Emitter Volt (Vceo): -160V
- Collector-Base Volt (Vcbo): -160V
- Collector Current (Ic): -0.1A
- hfe: 60-320 @ -10mA
- Power Dissipation (Ptot): 1.25W
- Transition Frequency (ft): 140MHz
- Type: PNP
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Part Summary
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Manufacturer
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Various
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Manufacturer's Part Number
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2SB1109
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Manufacturer's Web Site
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-
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Futurlec Part Number
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2SB1109
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Department
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Transistors
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Category
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Power - 2SB Series
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RoHS Compliant
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-
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Package Type
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TO-126
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Technical Data
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2SB1109 Datasheet
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Ordering
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Pricing Unit
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1
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Package Qty
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1
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Minimum Order Quantity
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1
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