IRF820 MOSFET Features
- Drain-Source Volt (Vds): 500V
- Drain-Gate Volt (Vdg): 500V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 2.5A
- Power Dissipation (Ptot): 80W
- Type: N-Channel
Description
The IRF820 MOSFET is a
high voltage, N-channel medium power MOSFET used in switching voltage regulators and power converter circuits.
The IRF820 transistor has a power rating of 80W, with a maximum drain current of 2.5A. The device
has a high maximum drain-source voltage of up to 500V.
This MOSFET is housed in a standard through-hole TO-220 package for easy mounting and good heat dissipation.
An aluminium heatsink can be fitted directly to the transistor as required.
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Part Summary
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Manufacturer
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Various
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Manufacturer's Part Number
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IRF820
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Manufacturer's Web Site
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Futurlec Part Number
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IRF820
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Department
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Transistors
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Category
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MOSFET - IRF Series
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RoHS Compliant
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-
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Package Type
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TO-220
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Technical Data
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IRF820 Datasheet
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Integrated Circuits
