Infrared Phototransistor 940nm 5mm Round LED Technical Data
Photograph
Features
- Water Clear Lens
- Excellent Performance Specifications
- Infrared Transistor
- RoHS Compliant
Pin Description
| Pin Number | Description |
|---|---|
| 1 | Cathode |
| 2 | Anode |
Dimensional Drawing
All Dimensions are in mm
Technical Data
Absolute Maximum Ratings
|
Operating Free Air Temperature: |
-40°C to +85°C |
|
Storage Temperature Range: |
-40°C to +100°C |
Electrical Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Vceo | Collector-Emitter Voltage | Ta=25°C | 30 | V | ||
| Veco | Emitter-Collector Voltage | Ta=25°C | 5 | V | ||
| Ic | Collector Current | Ta=25°C | 20 | mA | ||
| BVceo | Collector-Emitter Breakdown Voltage | Ic=100µA | 30 | V | ||
| BVeco | Emitter-Collector Breakdown Voltage | Ic=100µA | 5 | V | ||
| BVce(sat) | Collector-Emitter Saturation Voltage | Ic=0.7mA | 0.4 | V | ||
| Iceo | Collector Dark Current | Vce=20V | 100 | nA | ||
| Ic(on) | On-State Collector Current | Vce=5V | 0.7 | 2.0 | nA | |
| Pd | Max Power Dissipation | Ta=25°C | 75 | mW | ||
| Reception Angle | 30 | Degrees | ||||
| Peak Sensitivity Wavelength | 940 | nm | ||||
| Range of Spectral Bandwidth | 400 | 1100 | nm |


Integrated Circuits