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Infrared Phototransistor 940nm 5mm Round LED Technical Data

INFD5940TRANS - Infrared Phototransistor 940nm 5mm Round LED


arrowWater Clear Lens

arrowExcellent Performance Specifications

arrowInfrared Transistor

arrowRoHS Compliant

Pin Description
Pin Number Description
1 Cathode
2 Anode

Dimensional Drawing
LED 5mm Infrared Case Dimension Drawing

All Dimensions are in mm

Technical Data

Absolute Maximum Ratings

Operating Free Air Temperature:

-40°C to +85°C

Storage Temperature Range:

-40°C to +100°C

Electrical Characteristics

Symbol Parameter Conditions Min Typ Max Units
Vceo Collector-Emitter Voltage Ta=25°C     30 V
Veco Emitter-Collector Voltage Ta=25°C     5 V
Ic Collector Current Ta=25°C     20 mA
BVceo Collector-Emitter Breakdown Voltage Ic=100µA 30     V
BVeco Emitter-Collector Breakdown Voltage Ic=100µA 5     V
BVce(sat) Collector-Emitter Saturation Voltage Ic=0.7mA     0.4 V
Iceo Collector Dark Current Vce=20V     100 nA
Ic(on) On-State Collector Current Vce=5V 0.7 2.0   nA
Pd Max Power Dissipation Ta=25°C     75 mW
  Reception Angle     30   Degrees
  Peak Sensitivity Wavelength     940   nm
  Range of Spectral Bandwidth   400   1100 nm